SUPERMATRIX STRUCTURES AND GENERALIZED INVERSES

S.A. Duplij, O.I. Kotulska

Abstract
We consider noninvertible generalization of supermatrix structures playing an important part in the modern supersymmetric high energy physics theories construction. Similarly the Moore-Penrose theory of generalized inverses we introduce various types of generalized inverses for noninvertible supermatrices from the semigroup Mat _L (p|q). Examples of regular equation solutions for the case of Mat _L2 (1|1) are given. A noninvertible analog of superdeterminant which is valid not only for groups of supermatrices, but also for semigroups, is constructed.

KEY WORDS: supermatrix, superdeterminant, Grassmann algebra, noninvertibility, semigroup, generalized inverse, regularity.

SYMMETRIC SURFACE WAVES IN MULTI-LAYER CYLINDRICAL WAVEGUIDE STRUCTURES

N.A. Azarenkov, Yu.A. Akimov, V.P. Olefir

Abstract
The dispersion properties of the high-frequency axial symmetric potential surface wave (SW) are studied in this paper. The high-frequency SW propagates along an external permanent magnetic field at the borders of the cylindrical non-uniform plasma layer, which is contained inside the metallic casing. A dependence of the frequency, damping factor, phase and group velocities of the considered SW on the system parameters is investigated numerically and analytically. It has allowed to define effectiveness of control methods of considered waves dispersion properties and dissipation of their energy in plasma.

KEY WORDS: surface waves, dispersion, phase and group velocities, damping factor.

NEGATIVE ION CRYSTAL FORMATION IN NONEQUILIBRIUM DUSTY PLASMA

N.A. Azarenkov, V.I. Maslov, D.Yu. Frolova

Abstract
The crystal formation of heavy negative ions is considered in following system. The plasma flow with positive ions and electrons propagates relative to heavy negative ions. The flow excites the perturbations of large amplitudes. The properties and evolution of these excited perturbations are considered. The evolution equation is derived for the case of any amplitudes. It is shown that these perturbations of large amplitude lead to spatial ordering of heavy negative ions in nonequilibrium plasma.

KEY WORDS: crystal, colloidal plasma, perturbations, separatrix.

ABOUT FORMATION OF ELECTRON BEAM IN MAGNETRON GUN WITH SECONDARY-EMISSION CATHODE

A.N. Dovbnya, V.V. Zakutin, N.G. Reshetnyak

Abstract
The report presents the results from studies of electron layer formation and beam generation in magnetron gun. A secondary-emission multiplication and beam generation in the experiments, were observed. Discussed the electron layer formation and beam generation for sharp change of top pulse voltage. Experiments show possibility of generation several pulses beam current in one pulse voltage. Four pulses beam current 15 A and duration 0.6 … 1.0 ms was obtained.

KEY WORDS: cross-fields, secondary emission, magnetron gun, electron beam.

THE ISOSPIN INTERACTION CONSTANTS FOUND FROM ENERGY SPLITTING OF ANALOGUE AND ANTIANALOGUE STATES IN ODD-NUCLEI WITH A < 70

A.N. Vodin, I.V. Ushakov, A.S. Kachan, L.P. Korda, R.P. Slabospitsky

Abstract
The experimental estimation of the V₁ parameter of the single particle potential and the f₀^' constant of the particles effective isospin interaction based on the data analysis of energy splitting of analogue and antianalogue states in nuclei with А < 70 was carried out. Only T_> = T₀ + 1/2 and T_< = T₀ - 1/2 single particle 2p_3/2, 1f_7/2, and 1g_9/2 states which have spectroscopic factors S_p > 0.6 were discussed. It is shown up that the V₁ and f₀^' constants have different valuations for analogue resonances with T_> = 3/2, 5/2, 7/2 and 9/2. It was established that the theoretical estimation of the f₀^' constant diverges noticeably with its experimental valuation in the 20 < N < 28 nuclei vicinity.

KEY WORDS: isobaric spin, analog resonance, microscopic model, shell model, constants of isospin interaction.

THICKNESS AND COMPOSITION DETERMINATION OF SCANDIUM, GALLIUM, AND GERMANIUM THIN FILMS BY MEANS OF PROTON - INDUCED X-RAY EMISSION ANALYSIS

N.P. Dikiy, Yu.V. Lyashko, I.D. Fedorets

Abstract
A PIXE procedure as an alternative to other non-destructive methods for the determination of the thickness and composition of scandium, gallium, and germanium thin films deposited on thick tantalum backings is presented. It has been used in the thickness range of 0.2 - 1.7 mm with 1.3 MeV protons. The results are compared with those obtained earlier by weighing methods.

KEY WORDS: scandium, gallium, germanium, thin films, thickness measurements.

THE COMPARISON OF EXPERIMENTAL AND THEORETICAL VALUES OF CHARACTERISTIC X-RAY PRODUCTION CROSS-SECTIONS INDUCED BY 1.0 … 2.5 MEV PROTONS

A.O. Shchur, V.V. Levenets, O.P. Omelnyk

Abstract
In this article proton induced X-ray yields were measured from thick targets made from pure matters or chemical combinations of elements from K to Zn, Zr, Nb and Mo. The energy of protons at measurements varied from 1.0 up to 2.5 МeV with step 100 keV. Si (Li) the detector was used to measure X-ray emission. The dependence of efficiency of registration versus energy of quanta was defined using standard sources of a gamma radiation. Experimental X-ray yields, stopping power of a matter and absorbtion coefficients of X-ray radiation in matter data table were used to determine X-ray production cross-sections. The obtained values of cross-sections were compared with experimental data of other authors and ionization cross-sections predicted by theoretical models and empirical formulas. As a result of the comparison the analytical expression was defined which most precisely describes the dependence of cross-sections from energy of protons and atomic number of elements.

KEY WORDS: characteristic X-ray emission, cross-sections, protons, theoretical models, empirical formula.

LATTICE DINAMICS OF HTS YBCO IN THE MODEL OF NONISOCHRONIC HARMONIC VIBRATIONS WITH DISPERSION

I. N. Kudryavtsev

Abstract
The theoretical analysis of lattice dynamics for HTS YBCO is accomplished in the model of the nonisochronic harmonic vibrations. The analytical expressions for the phonon density of states and the main thermodynamic functions, with account of characteristic lattice dimensionality, are obtained. The phonon heat capacity, calculated without fitting parameters, with the choice of two-dimensional phonon spectrum, agrees with the experimental data within the wide temperature range 20 K £ T £ 300 K. The jump of the electronic heat capacity in the superconducting transition region is evaluated. The mean values of various dynamical characteristics of acoustic and optic phonons as the functions of temperature are calculated. The correlation between the properties of optic phonons and electronic subsystem of YBCO at the superconducting transition temperature is found.

KEY WORDS: lattice dynamics, phonon spectrum, phonon density of states, acoustic and optic phonons, phonon dispersion, nonisochronic vibrations, anharmonicity, heat capacity.

COMPUTER SIMULATION OF NITRIDE LAYERS FORMATION IN IRON UNDER THE HIGH DOSE ION IMPLANTATION

I.G. Marchenko, A.G. Guglya, I.M. Nekludov

Abstract
In the presented paper the process of surface layers nitriding by the use of ion implantation is investigated by the computer simulation methods. The time and the temperature dependencies of the implanted nitrogen concentration were obtained. It is shown that the nitriding process under the ion implantation demonstrates the strong temperature dependence. The comparison of the concentration calculated values with the experimental data were carried out. It was shown that the process of thick nitriding layers production under the ion implantation is well described by the proposed model of implanted nitrogen ion diffusion in metals. Obtained calculated temperature dependencies of nitrogen penetration depth correlates well with the experimental values.

KEY WORDS: ion implantation, nitrogen, iron, computer simulation.

THE STUDIES OF EMISSION OF EXCITED PARTICLES SPUTTERED BY Ar⁺ IONS FROM SURFACES OF ZINC AND ITS COMPOUNDS

V.V. Gritsyna, S.P. Gokov, D.I. Shevchenko, N.P. Danilevskiy, A.G. Koval

Abstract
In the work the studies of key parameters of emission of secondary excited particles (ESEP) of zinc and its compounds were carried out. Researches were done by an optical method. It has been established, that the yield of the excited particles correlates with coefficients of sputtering of studied materials badly and basically is determined by electronic processes at flying away of a particle from a surface. It has been shown, that at a bombardment of zinc compounds in comparison with metal there appears an additional mechanism of formation of the excited particles. Influence of an electron structure of a solid on an exit of excited particles and populations of levels of excitation has been noted.

KEY WORDS: excited particles, sputtering, quantum yield, zinc, efficiency of excitation.

ION - PHOTON EMISSION OF MAGNUM - ALUMINUM SPINEL

D.I. Shevchenko, V.V. Gritsyna, T.M. Slusarenko, N.P. Danilevskiy, A.G. Koval

Abstract
The results of studies of ion-photon emission of magnum - aluminum spinel - complex compound of MgO_nAl₂O₃ oxides - are given in the work. The spectral composition and quantum yield of sputtered particles emission at Ar⁺ bombardment of MgO_nAl₂O₃ (n=1; 2.5) samples and metallic Al in residual vacuum and at oxygen partial pressure
PO₂ = 5·10^-5 Torr were studied. It was established that only the emission of knocked-out excited particles of metals both atoms (Al I and Mg I lines) and ions (Al II, Al III, Mg II) was observed. The analysis of the quantum yield of AlI lines emission had shown that process of nonradiation loss of excitation of resonant type influenced substantially the probability of Al atoms fly-off in an excited state. This permitted to evaluate the width of conductive zone m of studied spinel (an energetic zone between an upper boundary of forbidden zone and vacuum level); it was shown that m » 1 eV.

KEY WORDS: spinel, excited particles, sputtering, quantum yield.

INVESTIGATION OF ENERGY DISTRIBUTIONS OF ATOMIC SECONDARY IONS SPUTTERING BY Ar⁺ IONS FROM SURFACES Al AND THE SEMICONDUCTOR Al_0.35Ga_0.65As

V.N. Melnykov, V.T. Koppe, A.G. Koval, V.V. Shekhurin

Abstract
The energy distributions of Al⁺ and Ga⁺ secondary ions sputtering from Al and Al_0.35Ga_0.65As semiconductor surfaces by Ar⁺ ions of E = 18 keV and current density 1·10^-5 A/sm² at partial pressure of oxygen from 10^-7 up to 6.5·10^-3 Pa have been studied in the work. It was established that energy distributions of Al⁺ and Ga⁺ ions were wide (occupied the whole studied energy interval) and had the structure depended upon the materials and sorts of ions. The oxygen influence resulted in sharp increase of low-energy secondary ion yield for Al; energy distributions of Ga⁺ ions were nearly invariable, and the yield of low energy Al⁺ increased a little for Al_0.35Ga_0.65As. The results may be explained using a model of tunnel resonant transitions as ions fly-off surface.

KEY WORDS: aluminum, A^IIIB^V semiconductors, secondary ion emission, energy spectra, SIMS.

THE ENERGY DISTRIBUTION OF SECONDARY ATOMIC AND CLUSTER IONS SPUTTERED FROM TUNGSTEN SURFACE

A.G. Koval, V.T. Koppe, V.N. Melnykov, V.V. Shekhurin

Abstract
The results of experimental measurements of energy distributions of secondary atomic and cluster ions sputtered by Ar⁺ ions of Е = 18 keV from clean and covered in various degree by adsorbed oxygen and oxides tungsten surface are given. It was shown that energy distributions of secondary atomic ions were wide spread up to 2 keV and higher and had maximum in energy range 100 - 200 eV. Dimer and cluster ions had narrower energy distributions with maximum in low-energy range (10 - 40 eV). The obtained results support the cascade mechanism of sputtering together with the mechanism of tunnel resonant transitions of electron between the sputtered particle and a solid.

KEY WORDS: energy distributions, secondary ions, oxygen influence, cascade processes, tunnel transitions.

TO THE PROBLEM OF A SPATIAL DISTRIBUTION OF EXCITED PARTICLES SPUTTERED BY MEDIUM ENERGY IONS

A.G. Koval, A.Yu. Sobolev, V.N. Kondratiuk, Yu.I. Kovtunenko

Abstract
The approach that different from earlier one, for the explanation of the spatial distribution of the radiation intensity of the excited atomic particles sputtered from materials of various electron structures is described. This approach was based on the calculation of intensities of the excited particle radiation on different distances from a target considering the whole sputtered particle energy spectra. The comparison with experimental distributions of intensities was made. Well agreement of calculation data with experimental ones is observed. Such agreement is observed for the cascade mechanism of sputtering when the mechanism of tunnel resonant transitions of electron between the sputtered particle and a solid is imposed upon it; that takes place for clean surfaces of metals. For dielectrics only the cascade sputtering mechanism was inserted into calculation. It is interesting that at such consideration the process of excitation did not appeared separately. It may testify that the particle is excited in one act with its sputtering.

KEY WORDS: a spatial distribution, an intensity distribution, analytical calculation, an excitation, survival, sputtering.

FORMATION OF RADIATION DEFECTS IN GaAs and GaP AT DEUTERIUM ION IMPLANTATION

L.P. Tishchenko, T.I. Peregon, A.G. Koval

Abstract
The results of studies of a formation of radiation defects in GaAs and GaP at irradiation by medium energy deuterium ions are given. The methods of thermodesorption mass-spectrometry and analysis of changing of electrophysical properties (voltage-current characteristic and electrical resistivity) of irradiated gallium arsenide and phosphide were used. It was shown that in the studied samples as a result of D⁺ ions bombardment there were stored matrix intrinsic defects and implanted particles of a bombarded beam. It was supposed that complexes from intrinsic and impurity defects of a crystal lattice were formed; they at postimplantation heating can be transformed with the release of deuterium, its migration to a surface and thermodesorption in vacuum.

KEY WORDS: A^IIIB^V semiconductors, radiation defects, ion irradiation, thermodesorption, electrophysical characteristics.

ABOUT SOME FEATURES OF EMISSION OF A_kB_n⁺ SECONDARY IONS AT THE BOMBARDMENT OF A^IIIB^V SEMICONDUCTORS BY Ar⁺ IONS

V.N. Melnykov, T.P. Belous, V.A. Koval

Abstract
The main regularities of emissions of positive secondary matrix ions (A_kB_n⁺ ions) at the bombardment Ar⁺ ions of A^IIIB^V binary semiconductors (GaAs, GaP, InAs, InP) were studied. The energy of Ar⁺ ions was 2 keV, the current density was 3·10^-8 А/sm². It was established that the yields of A_k⁺ and B_k⁺ ions decreased at increase of the cluster complication as exponential law; the yields of cluster ions what are combination of A and B atoms (A_kB⁺ and A_kB₂⁺) at increase of the cluster complication changed nonmonotonically. The yields of these clusters changed no more than 5 - 6 times at k changing from 1 to 4. The results explained analyzing the processes of knocking-out, ionizing and surviving of clusters of various compositions at their fly-off from surfaces and also taking into account the differences of atomic bonding forces in clusters.

KEY WORDS: emission, secondary ion emission, cluster ions, SIMS, A^IIIB^V semiconductors, GaAs, InAs, GaP, InP.

TIME OF LAGGING AND DIFFUSIONAL TRANSFER OF ADMIXTURE IN BIPOROUS SORBENT

І.Р.Chastokolenko

Abstract
The analysis of results of the experimental research by means of the method of time lagging diffusional transfer steam of iodine in biporous of aluminium has been carried out. The of diffusional transfer of admixture component in biporous sorbent, which was proposed here, has been used for analysis. The influence on time transfer structure of porous medium was taken into account in accordance with the expression, which was obtained in the result of preliminary examination object of diffusion admixture in the system of canals. These canals make up the regular grating.

KEY WORDS: capillary, time of lag, diffusion, adsorption, transport pores, biporous sorbent.

TERMOACTIVATION ANALYSIS OF SUPERPLASTIC FLOW OF COPPER ELECTROLITICAL FOIL

V.V. Bryukhovetsky, R.I. Kuznetsova, V.F. Klepikov, V.V. Lytvynenko, V.F. Kivshyk, V.A. Bychko

Abstract
The thermoactivating analysis of superplastic flow of electrolytic copper foils in the region of high homological temperatures is conducted. It is found that the magnitude of activation energy of superplastic deformation of copper foils coincides with the magnitude of activation energy of the main deformation mechanisms under these conditions - the grainboundary sliding. The method of determining the activation energy at which the grainboundary cavity develops under the conditions of superplasticity is proposed for the first time. It is shown that the activation energy of the grainboundary cavity development coincides with both the total energy of foil deformation and the activation energy of grainboundary sliding. This observation witnesses that the process of cavity development is in close link with the grainboundary sliding and is controlled by the same microscopic mechanism as the superplastic flow is.

KEY WORDS: superplasticity, grain boundary sliding, grain boundary cavities, activation energy, copper electrolitical foil.

ELECTRICAL AND THERMAL CONDUCTIVITIES OF Mo_1-xRe_x ALLOYS AT LOW TEMPERATURES

A.N. Velikodny, Т.А. Ignat'eva

Abstract
Electrical and thermal conductivities of Mo-Re alloys have been investigated at temperatures T < 10 K. Study of the thermal conductivity at low temperatures allowed determining the lattice thermal conductivity of alloys and pure molybdenum. Using the data for a density of states in Mo-Re alloys at electronic topological transition the dependence of a resistance on the Re content is calculated, and is in qualitative conforming with experimental results.

KEY WORDS: electroconductivity, thermal conductivity, relaxation time, density of states, electron electronic topological transition.

THE MATHEMATICAL SIMULATION OF SECONDARY EMISSION PROCESSES INDUCED BY FAST IONS

V.P. Zhurenko, A.S. Kononenko, S.I. Kononenko, V.I. Muratov

Abstract
This paper deals with the elementary cell of secondary emission radioisotope current source. The results of mathematical simulation of secondary emission processes induced by fast a-particle in the elementary cell that consists of Al and Cu layers are presented. The calculated excess charge arisen in the cell by passing of one a-particle shows that secondary electron emission plays a vital part in the charge balance of the elementary cell. The energy spectra of this emission that have a power-law character show that the true secondary electron emission is the process which makes a great contribution on excess charge appearance, and elastic reflected electrons can be neglected.

KEY WORDS: fast ions, ion-electron emission, secondary electron emission, secondary electrons, electron yield, energy spectrum.

THE FEATURES OF CYCLIC ALTERNATING MAGNETIZATION OF DEFORMED FERROMAGNETIC ALLOY Co-Fe-Nb

A.I. Velikodniy, V.G. Kirichenko

Abstract
In this work it is showed that cycling alternating magnetization of magnetic semihard alloy Co-Fe-Nb which deformed by strain and twisting caused by formation of induced axis of easy magnetization. The threshold field of giant Barkhausen jump is determined by rotation of magnetization vector opposite the anisotropy forces and under domain borders displacement to an equal extent.

KEY WORDS: Wiegand effect, magnetic semihard alloys, alternating magnetization.